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MATISEN team: Materials for information technology, sensing and energy conversion.

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Inorganic photovoltaics
Electronics/PV organics
Ion beam assisted processes
Physical modeling of transport
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The MaCÉPV team is running multidisciplinary research activities ranging from the synthesis of materials with physical and chemical tools to the achievement of elementary devices (diodes, transistors, memories, solar cells), through the modeling of charge transport in such devices. More specifically, the investigations concern the development of innovative processes for wafer based silicon solar cells (multicrystalline, ribbon), the formation and characterization of ultrathin film silicon solar cells on foreign substrates, the synthesis and characterization of oxide/nitride based nanostructured materials for optoelectronics, the optimization of transistors and organic solar cells, the modification/synthesis of new materials by ion beams for the development of innovative electronic components, the development of models and simulation tools to study the charge transport in photovoltaic and electronic components.
The MaCÉPV team owns advanced infrastructures such as two technological platforms (clean room, glove box), unique facilities for the synthesis of materials (ion implanters, lasers, CVD, sputtering), for structural analysis (RBS, ERDA, Raman ...) and for optoelectronic investigations (photoluminescence, spectral response, ...) in addition to setups for the analysis of devices. The Modeling activities rely on computers and simulation tools developed in-house or commercial software (Monte-Carlo, scripts, COMSOL Multiphysics, ...).
The MaCÉPV team is involved in numerous national (ANR, AMI...) and European projects (INTERREG, FP7, EUROGIA...) as well as in international collaborations (Kazakhstan, Belarus, Turkey ...).
The MaCÉPV team activities are divided into four themes with quite strong interactions among them, namely:
T1. Materials and concepts for inorganic photovoltaics
T2. Electronic and Photovoltaics based organic devices
T3. Ion beam assisted Processes
T4. Physical modeling of charges transport in devices