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Équipe MATISEN: Matériaux pour les technologies de l’information, les capteurs et la conversion d’énergie.

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<p align="left" style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%">
<font face="calibri, serif"><font size="2" style="font-size: 15pt"><b>Ann&eacute;e
2011</b></font></font></p>
<p align="left" style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%">
<font face="comic, serif"><font size="2" style="font-size: 11pt"><b>
* Articles dans des revues internationales avec comit&eacute; de lecture r&eacute;pertori&eacute;es dans les bases de donn&eacute;es internationales</b></font></font></p>
<p align="justify" style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%">
<font face="Arial, serif"><font size="1" style="font-size: 8pt"><b>[2-GMSK11]</b></font></font><font face="Arial, serif"><font size="1" style="font-size: 8pt"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font size="2" style="font-size: 9pt">Y.
Gurimskaya, D. Mathiot, A. Sellai, P. Kruszewski, L. Dobaczewski, A.
Nylandsted Larsen, A. Mesli.<br>''' Spectroscopic studies of iron and chromium in germanium''' , </font></font><font face="Arial, serif"><font size="2" style="font-size: 9pt"><i>Journal of Applied Physics</i></font></font><font face="Arial, serif"><font size="2" style="font-size: 9pt"><span style="font-style: normal">,
American Institute of Physics (AIP), Vol. 110:113707_1--7, 2011. (&#8239;IF: 2.101, SNIP : 0.755, SJR : 0.603&#8239;)</span></font></font></p>
<p align="left" style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%">
<font face="comic, serif"><font size="2" style="font-size: 11pt"><b>
* Communications &agrave; des manifestations internationales avec actes et comit&eacute; de lecture</b></font></font></p>
<p align="justify" style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%">
<font face="Arial, serif"><font size="1" style="font-size: 8pt"><b>[4-LZU11]</b></font></font><font face="Arial, serif"><font size="1" style="font-size: 8pt"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font size="2" style="font-size: 9pt">J-P.
Le Normand, V. Zint, W. Uhring.<br>''' High repetition rate integrated streak camera in standard CMOS technology''' , dans </font></font><font face="Arial, serif"><font size="2" style="font-size: 9pt"><i>4th
International Conference on Sensor Technologies and Applications
(SENSORCOMM 2011)</i></font></font><font face="Arial, serif"><font size="2" style="font-size: 9pt">,
pp. 322--327, Saint-Laurent-du-Var, France, ao&ucirc;t 2011.</font></font></p>


<p align="left" style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%">
<p align="left" style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%">
<font face="calibri, serif"><font size="2" style="font-size: 15pt"><b>Ann&eacute;e
<font face="calibri, serif"><font size="2" style="font-size: 15pt"><b>Ann&eacute;e
Ligne 18 : Ligne 40 :
IOP Publishing, Vol. 20:415608_1--5, 2009. (&#8239;IF : 3.573, SNIP :
IOP Publishing, Vol. 20:415608_1--5, 2009. (&#8239;IF : 3.573, SNIP :
0.912, SJR : 1.196&#8239;)</span></font></font></p>
0.912, SJR : 1.196&#8239;)</span></font></font></p>
<br>

<p align="justify" style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%">
<font face="Arial, serif"><font size="1" style="font-size: 8pt"><b>[2-DCFG09a]</b></font></font><font face="Arial, serif"><font size="1" style="font-size: 8pt"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font size="2" style="font-size: 9pt">F.
Delachat, M. Carrada, G. Ferblantier, J-J. Grob, A. Slaoui, H.
Rinnert.<br>''' The structural and optical properties of SiO\( {2}\)/Si rich SiN\( {x}\) Si-ncs''' , </font></font><font face="Arial, serif"><font size="2" style="font-size: 9pt"><i>Nanotechnology</i></font></font><font face="Arial, serif"><font size="2" style="font-size: 9pt"><span style="font-style: normal">,
IOP Publishing, Vol. 20:275608_1--5, 2009. (&#8239;IF : 3.573, SNIP :
0.912, SJR : 1.196&#8239;)</span></font></font></p>




Ligne 81 : Ligne 109 :




<P STYLE="margin-bottom: 0in"><FONT FACE="Arial, serif"><FONT SIZE=1 STYLE="font-size: 8pt"><B>5. </B></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=1 STYLE="font-size: 8pt"><SPAN STYLE="font-weight: normal"> </SPAN></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt">Biniek L., Chochos C.L., Leclerc L., Hadziioannou G., Kallitsis J.K.
<br />'''A [3,2-b]thienothiophene-alt-benzothiadiazole copolymer for photovoltaic
applications: design, synthesis, material characterization and device
performances''', </FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt"><I>
J. Mater. Chem.</I></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt">,
Vol 19, 2009, pp. 4946-4951..</FONT></FONT></P>
<br />


<P STYLE="margin-bottom: 0in"><FONT FACE="Arial, serif"><FONT SIZE=1 STYLE="font-size: 8pt"><B>6. </B></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=1 STYLE="font-size: 8pt"><SPAN STYLE="font-weight: normal"> </SPAN></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt">Bechara R., Leveque P. and Heiser T.,
M. Mamor, N. Unnikrishnan.
<br />'''Properties of silicon nanoparticles embedded in SiNx deposited by microwave-PECVD''', </FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt"><I>Nanotechnology</I></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt"><SPAN STYLE="font-style: normal">,
Vol. 20 (2009) 415608 (5pp).</SPAN></FONT></FONT></P>
<br />


<P STYLE="margin-bottom: 0in"><FONT FACE="Arial, serif"><FONT SIZE=1 STYLE="font-size: 8pt"><B>7. </B></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=1 STYLE="font-size: 8pt"><SPAN STYLE="font-weight: normal"> </SPAN></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt"> Delachat F., Carrada M., Ferblantier G.,Grob J.J., Slaoui A. and Rinnert H.
<br />'''The structural and optical properties of SiO2/Si rich SiNx multilayers containing Si-ncs''', </FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt"><I>Nanotechnology</I></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt"><SPAN STYLE="font-style: normal">,
Vol. 20 (2009) 275608 (5pp).</SPAN></FONT></FONT></P>
<br />


<P STYLE="margin-bottom: 0in"><FONT FACE="Arial, serif"><FONT SIZE=1 STYLE="font-size: 8pt"><B>8.</B></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=1 STYLE="font-size: 8pt"><SPAN STYLE="font-weight: normal"> </SPAN></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt">Le Normand J.P., Zint C.V., and Uhring W.
<br /> '''High Repetition Rate Integrated Streak Camera in Standard CMOS Technology''', </FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt"><I>
Photonics Europe 2004</I></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt">,
</FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt"><I>
4th International Conference on Sensor Technologies and Applications (SENSORCOMM 2011)</I></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt"><SPAN STYLE="font-style: normal">,
Saint-Laurent-du-Var (France), August 21-27, 2011, Proc. pp. 322-327</SPAN></FONT></FONT></P>
<br />



<P STYLE="margin-bottom: 0in"><FONT FACE="Arial, serif"><FONT SIZE=1 STYLE="font-size: 8pt"><B>9.</B></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=1 STYLE="font-size: 8pt"><SPAN STYLE="font-weight: normal"> </SPAN></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt">Gurimskaya Y.,Mathiot D.,Sellai A.,Kruszewski P., Dobaczewski L., Nylandsted Larsen A.,Mesli A..
<br /> '''Spectroscopic studies of iron and chromium in germanium''', </FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt"><I>
J. Appl. Phys.</I></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt"><SPAN STYLE="font-style: normal">,
Vol.110, 113707 (2011)</SPAN></FONT></FONT></P>
<br />


<P STYLE="margin-bottom: 0in"><FONT FACE="Arial, serif"><FONT SIZE=1 STYLE="font-size: 8pt"><B>10.</B></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=1 STYLE="font-size: 8pt"><SPAN STYLE="font-weight: normal"> </SPAN></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt">Mathiot D., Khelifi R.,Muller D., Duguay S.
<P STYLE="margin-bottom: 0in"><FONT FACE="Arial, serif"><FONT SIZE=1 STYLE="font-size: 8pt"><B>10.</B></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=1 STYLE="font-size: 8pt"><SPAN STYLE="font-weight: normal"> </SPAN></FONT></FONT><FONT FACE="Arial, serif"><FONT SIZE=2 STYLE="font-size: 9pt">Mathiot D., Khelifi R.,Muller D., Duguay S.

Version du 10 mars 2017 à 14:52

Année 2011

  • Articles dans des revues internationales avec comité de lecture répertoriées dans les bases de données internationales

[2-GMSK11] Y. Gurimskaya, D. Mathiot, A. Sellai, P. Kruszewski, L. Dobaczewski, A. Nylandsted Larsen, A. Mesli.
Spectroscopic studies of iron and chromium in germanium ,
Journal of Applied Physics, American Institute of Physics (AIP), Vol. 110:113707_1--7, 2011. ( IF: 2.101, SNIP : 0.755, SJR : 0.603 )

  • Communications à des manifestations internationales avec actes et comité de lecture

[4-LZU11] J-P. Le Normand, V. Zint, W. Uhring.
High repetition rate integrated streak camera in standard CMOS technology , dans
4th International Conference on Sensor Technologies and Applications (SENSORCOMM 2011), pp. 322--327, Saint-Laurent-du-Var, France, août 2011.


Année 2009

  • Articles dans des revues internationales avec comité de lecture répertoriées dans les bases de données internationales

[2-BCLH09] L. Biniek, C. Chochos, N. Leclerc, G. Hadziioannou, J. Kallitsis, R.Bechara, P. Lévêque, T. Heiser.
A [3,2-b]thienothiophene-alt-benzothiadiazole copolymer for photovoltaic applications: Design, synthesis, material characterization and device performances ,
Journal of Materials Chemistry, Royal Society of Chemistry, Vol. 19:4946--4951, 2009. ( SNIP : 2.161, SJR : 2.54 )


[2-DCFG09] F. Delachat, M. Carrada, G. Ferblantier, J-J. Grob, A. Slaoui.
Properties of silicon nanoparticles embedded in SiN\( {x}\) deposited by microwave-PECVD ,
Nanotechnology, IOP Publishing, Vol. 20:415608_1--5, 2009. ( IF : 3.573, SNIP : 0.912, SJR : 1.196 )


[2-DCFG09a] F. Delachat, M. Carrada, G. Ferblantier, J-J. Grob, A. Slaoui, H. Rinnert.
The structural and optical properties of SiO\( {2}\)/Si rich SiN\( {x}\) Si-ncs ,
Nanotechnology, IOP Publishing, Vol. 20:275608_1--5, 2009. ( IF : 3.573, SNIP : 0.912, SJR : 1.196 )


Année 2008

  • Communications à des manifestations internationales avec actes et comité de lecture

[4-MZUL08] F. Morel, V. Zint, W. Uhring, J-P. Le Normand.
Performances of a solid streak camera in standard CMOS technology with nanosecond time resolution , dans
Photonics Europe, Proceedings of the Society of Photo-optical Instrumentation Engineers, Vol. 7003, edited by F. Berghmans, A.G. Mignani, A. Cutolo, P.P. Meyrueis, T.P. Pearsall (Eds.), Strasbourg, France, avril 2008.


Année 2007

  • Articles dans des revues internationales avec comité de lecture répertoriées dans les bases de données internationales

[2-MFUJ07] M. Madec, J-B. Fasquel, W. Uhring, P. Joffre, Y. Hervé.
Optical implementation of the filtered backprojection algorithm ,
Optical Engineering, Society of Photo-optical Instrumentation Engineers (SPIE), Vol. 46:108202_1--16, 2007. ( IF : 0.984, SNIP : 0.85, SJR : 0.485 )


Année 2004

  • Communications à des manifestations internationales avec actes et comité de lecture

[4-MLZU04a] F. Morel, J-P. Le Normand, V. Zint, W. Uhring, Y. Hu.
A spatiotemporal CMOS imager for nanosecond low power pulse detections , dans
3rd IEEE International Conference on Sensors (Sensors 2004), pp. 911--914, Vienna, Austria, octobre 2004.












10. Mathiot D., Khelifi R.,Muller D., Duguay S.
Co-implantation, a simple way to grow doped Si nanocrystals embedded in SiO2,
Photonics Europe 2004, E-MRS Proc_Spring_2012


11. JouaneY., Colis S., Schmerber G. , Dinia A., Lévêque P., T. Heiser, Chapuis Y.-A.
Influence of flexible substrates on inverted organic solar cells using sputtered ZnO as cathode interfacial layer,
Organic Electronics, pages 1861--1868, Volume 14, 2013


12. Khelifi R., Mathiot D., Gupta R., Muller D., Roussel M., Dugay S.
Efficient n-type doping of Si nanocrystals embedded in SiO2 by ion beam synthesis,
Applied Physics Letters , Vol.102,013116(2013)


13. Y. Jouane et al.
Impact of sputtered ZnO interfacial layer on the S-curve in conjugated polymer/fullerene based-inverted organic solar cells,
Thin Solid Films, 576 (2015) 23–30