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Équipe MATISEN: Matériaux pour les technologies de l’information, les capteurs et la conversion d’énergie.

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<p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<font face="calibri, serif"><font style="font-size: 15pt" size="2"><b>Année
2021</b></font></font></p><p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<font face="comic, serif"><font style="font-size: 11pt" size="2"><b>
* Articles dans des revues internationales avec comité de lecture répertoriées dans les bases de données internationales</b></font></font></p>
<p style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%" align="left">
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-FSRR21]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">T. Fix, G. Schmerber , J-L. Rehspringer , M. Rastei , S. Roques, J. Bartringer, A. Slaoui.<br>''' Insights on hexagonal TbMnO3 for optoelectronic applications: From powders to thin films''' , </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Journal of Alloys and Compounds </i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><span style="font-style: normal"> , Elsevier ( IF : 5.316, SNIP : 1.38, SJR : 1.112 ), page 160922, Volume 883, 2021, doi:10.1016/j.jallcom.2021.160922</span></font></font></p>

<p style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%" align="left">
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-TMRB21]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">J. Tribollet , D. Muller, S. Roques, J. Bartringer, T. Fix.<br>''' Shallow implanted SiC spin qubits used for sensing an internal spin bath and external YIG spins''' , </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Nanoscale </i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><span style="font-style: normal">, Royal Society of Chemistry ( IF : 7.79, SNIP : 1.272, SJR : 2.038 ), pages 13827-13834, Volume 13, 2021, doi:10.1039/D1NR02877D</span></font></font></p>

<p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<font face="calibri, serif"><font style="font-size: 15pt" size="2"><b>Année
2018</b></font></font></p><p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<font face="comic, serif"><font style="font-size: 11pt" size="2"><b>
* Articles dans des revues internationales avec comité de lecture répertoriées dans les bases de données internationales</b></font></font></p>
<p style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%" align="left">
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-CBFI18]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">P. Chavez , I. Bulut , S. Fall, O. Ibraikulov, C. Chochos , J. Bartringer, T. Heiser, P. Lévêque, N. Leclerc.<br>''' An Electron-Transporting Thiazole-Based Polymer Synthesized Through Direct (Hetero)Arylation Polymerization''' , </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Molecules </i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><span style="font-style: normal">, MDPI ( IF : 3.098, SNIP : 1.146, SJR : 0.855 ), page 1270, Volume 23, mai 2018, doi:10.3390/molecules23061270</span></font></font></p>

<p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<font face="calibri, serif"><font style="font-size: 15pt" size="2"><b>Année
<font face="calibri, serif"><font style="font-size: 15pt" size="2"><b>Année
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logiciel n°&nbsp;IDDN.FR.001.280010.000.R.P.2016.000.10000, le 1
logiciel n°&nbsp;IDDN.FR.001.280010.000.R.P.2016.000.10000, le 1
juillet 2016.</font></font></p>
juillet 2016.</font></font></p>

<p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<font face="calibri, serif"><font style="font-size: 15pt" size="2"><b>Année
<font face="calibri, serif"><font style="font-size: 15pt" size="2"><b>Année
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<p style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%" align="justify">
<p style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%" align="justify">
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-PBS14]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">P.
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-PBS14]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">P.
Prathap, J. Bartringer, A. Slaoui. Analysis of laser doping of
Prathap, J. Bartringer, A. Slaoui.<br>''' Analysis of laser doping of silicon using different boron dopant sources''' , </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Applied
silicon using different boron dopant sources, </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Applied
Surface Science</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><span style="font-style: normal">,
Surface Science</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><span style="font-style: normal">,
Elsevier, Vol. 302:268-274, 2014. (&#8239;IF : 3.15, SNIP : 1.236,
Elsevier, Vol. 302:268-274, 2014. (&#8239; IF : 4.439, SNIP : 1.328, SJR : 1.093 &#8239;)</span></font></font></p>
SJR : 0.93&#8239;)</span></font></font></p>


<p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
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<p style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%" align="justify">
<p style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%" align="justify">
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-LBAB13]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">S.
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-LBAB13]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">S.
Laidoudi, A. Bioud, A. Azizi, J. Bartringer, G. Schmerber, A. Dinia.
Laidoudi, A. Bioud, A. Azizi, J. Bartringer, G. Schmerber, A. Dinia.<br>
Growth and characterization of electrodeposited Cu2O thin films,
'''Growth and characterization of electrodeposited Cu2O thin films''' ,
</font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Semiconductor
</font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Semiconductor
Science and Technology</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><span style="font-style: normal">,
Science and Technology</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><span style="font-style: normal">,
Institute of Physics: Hybrid Open Access, Vol. 28(11):0268-1242,
Institute of Physics: Hybrid Open Access, Vol. 28(11):0268-1242,
octobre 2013. (&#8239;IF : 2.098, SNIP : 0.894, SJR : 0.676&#8239;)</span></font></font></p>
octobre 2013. (&#8239;IF : 2.28, SNIP : 1.003, SJR : 0.757&#8239;)</span></font></font></p>
<p style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%" align="justify">
<p style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%" align="justify">
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-PQMB13]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">S.
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-PQMB13]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">S.
Parola, É. Quesnel, V. Muffato, J. Bartringer, A. Slaoui.
Parola, É. Quesnel, V. Muffato, J. Bartringer, A. Slaoui.<br>
Influence of the embedding matrix on optical properties of Ge
'''Influence of the embedding matrix on optical properties of Ge nanocrystals-based nanocomposite''' , </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Journal
nanocrystals-based nanocomposite, </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Journal
of Applied Physics</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><span style="font-style: normal">,
of Applied Physics</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><span style="font-style: normal">,
American Institute of Physics (AIP), Vol. 113:053512_1--8, 2013. (&#8239;IF
American Institute of Physics (AIP), Vol. 113:053512_1--8, 2013. (&#8239; IF : 2.176, SNIP : 0.953, SJR : 0.739&#8239;)</span></font></font></p>
: 2.101, SNIP : 0.755, SJR : 0.603&#8239;)</span></font></font></p>
<p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<font face="comic, serif"><font style="font-size: 11pt" size="2"><b>
<font face="comic, serif"><font style="font-size: 11pt" size="2"><b>
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<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[6-SBZM13]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">T.
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[6-SBZM13]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">T.
Schutz-Kuchly, J. Bartringer, J. Zelgowski, F. Mermet, A. Bahouka, M.
Schutz-Kuchly, J. Bartringer, J. Zelgowski, F. Mermet, A. Bahouka, M.
Pawlik, J-P. Vilcot, E. Delbos, A. Slaoui. UV and IR laser induced
Pawlik, J-P. Vilcot, E. Delbos, A. Slaoui.<br>''' UV and IR laser induced ablation of SIN:H, AL2O3/SIN:H, A-SI:H/SIN:H''' , dans </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Photovoltaic
ablation of SIN:H, AL2O3/SIN:H, A-SI:H/SIN:H, dans </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Photovoltaic
technical conference - Thin film &amp; Advanced silicon solutions
technical conference - Thin film &amp; Advanced silicon solutions
2013</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">,
2013</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">,
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<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-PQMG12]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">S.
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-PQMG12]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">S.
Parola, É. Quesnel, V. Muffato, L. Guetaz, H. Szambolics, J.
Parola, É. Quesnel, V. Muffato, L. Guetaz, H. Szambolics, J.
Bartringer, A. Slaoui. Structural properties of Ge nanocrystals
Bartringer, A. Slaoui.<br>''' Structural properties of Ge nanocrystals synthesized by a PVD nanocluster source''' , </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Journal
synthesized by a PVD nanocluster source, </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Journal
of Nanoparticle Research</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><span style="font-style: normal">,
of Nanoparticle Research</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><span style="font-style: normal">,
Springer Verlag, Vol. 14:1085_1--9, 2012. (&#8239;IF : 2.101, SNIP :
Springer Verlag, Vol. 14:1085_1--9, 2012. (&#8239; IF : 2.127, SNIP : 0.603, SJR : 0.528&#8239;)</span></font></font></p>
0.665, SJR : 0.583&#8239;)</span></font></font></p>
<p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<font face="comic, serif"><font style="font-size: 11pt" size="2"><b>
<font face="comic, serif"><font style="font-size: 11pt" size="2"><b>
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<p style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%" align="justify">
<p style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%" align="justify">
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[4-SPB12]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">A.
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[4-SPB12]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">A.
Slaoui, P. Prathap, J. Bartringer. Laser doping from spin-on sources
Slaoui, P. Prathap, J. Bartringer.<br>''' Laser doping from spin-on sources for selective emitter silicon solar cells''' , dans </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>SPIE
for selective emitter silicon solar cells, dans </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>SPIE
Optics+Photonics 2012</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">,
Optics+Photonics 2012</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">,
</font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>
</font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>
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<p style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%" align="justify">
<p style="margin-left: 0.79in; text-indent: -0.79in; margin-bottom: 0in; line-height: 100%" align="justify">
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[6-PBS12]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">P.
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[6-PBS12]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">P.
Prathap, J. Bartringer, A. Slaoui. Selective emitter formation by
Prathap, J. Bartringer, A. Slaoui.<br>''' Selective emitter formation by laser doping of spin-on sources''' , dans </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>European
laser doping of spin-on sources, dans </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>European
Material Research Society (E-MRS) Spring Conference, Symposium on
Material Research Society (E-MRS) Spring Conference, Symposium on
Laser Materials Processing for Micro and Nano Applications</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">,
Laser Materials Processing for Micro and Nano Applications</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">,
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<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[4-FSBB11]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">A.
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[4-FSBB11]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">A.
Focsa, A. Slaoui, R. Bernard, J. Bartringer, F. de Moro, C. Riune, E.
Focsa, A. Slaoui, R. Bernard, J. Bartringer, F. de Moro, C. Riune, E.
Jolivet, C. Belouet, B. Bazer-Bachi, M. Lemiti. Correlation of growth
Jolivet, C. Belouet, B. Bazer-Bachi, M. Lemiti.<br>''' Correlation of growth parameters of RST ribbons on the minority carrier lifetime and solar cells''' , dans </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>26th
parameters of RST ribbons on the minority carrier lifetime and solar
cells, dans </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>26th
European Photovoltaic Solar Energy Conference and Exhibition (26th EU
European Photovoltaic Solar Energy Conference and Exhibition (26th EU
PVSEC)</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">,
PVSEC)</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">,
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<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-ARGM10]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">S.
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-ARGM10]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">S.
Al-Harthi, K. Revathy, F. Gard, A. Mesli, A. George, J. Bartringer,
Al-Harthi, K. Revathy, F. Gard, A. Mesli, A. George, J. Bartringer,
M. Mamor, N. Unnikrishnan. Self-assembly of silver nanoparticles and
M. Mamor, N. Unnikrishnan.<br>''' Self-assembly of silver nanoparticles and multiwall carbon nanotubes on decomposed GaAs surfaces''' , </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Nanoscale
multiwall carbon nanotubes on decomposed GaAs surfaces, </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Nanoscale
Research Letters</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><span style="font-style: normal">,
Research Letters</i></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><span style="font-style: normal">,
SpringerOpen, Vol. 5:1737--1743, 2010. (&#8239;IF : 2.584, SNIP :
SpringerOpen, Vol. 5:1737--1743, 2010. (&#8239;IF : 2.584, SNIP : 0.874, SJR : 0.713&#8239;)</span></font></font></p>
0.611, SJR : 0.538&#8239;)</span></font></font></p>
<p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<p style="margin-top: 0.14in; margin-bottom: 0.07in; line-height: 100%" align="left">
<font face="calibri, serif"><font style="font-size: 15pt" size="2"><b>Année
<font face="calibri, serif"><font style="font-size: 15pt" size="2"><b>Année
Ligne 148 : Ligne 155 :
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-MUHF09]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">M.
<font face="Arial, serif"><font style="font-size: 8pt" size="1"><b>[2-MUHF09]</b></font></font><font face="Arial, serif"><font style="font-size: 8pt" size="1"><span style="font-weight: normal"> </span></font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2">M.
Madec, W. Uhring, É. Hueber, J-B. Fasquel, J. Bartringer, Y.
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Hervé. Methods for improvement of spatial light modulator
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image rendering, </font></font><font face="Arial, serif"><font style="font-size: 9pt" size="2"><i>Optical
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Society of Photo-optical Instrumentation Engineers (SPIE), Vol.
Society of Photo-optical Instrumentation Engineers (SPIE), Vol.
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<font face="calibri, serif"><font style="font-size: 15pt" size="2"><b>Année
<font face="calibri, serif"><font style="font-size: 15pt" size="2"><b>Année
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Uhring, V. Zint, J. Bartringer. A low-cost high-repetition-rate
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Dernière version du 9 novembre 2021 à 10:28

Année 2021

  • Articles dans des revues internationales avec comité de lecture répertoriées dans les bases de données internationales

[2-FSRR21] T. Fix, G. Schmerber , J-L. Rehspringer , M. Rastei , S. Roques, J. Bartringer, A. Slaoui.
Insights on hexagonal TbMnO3 for optoelectronic applications: From powders to thin films ,
Journal of Alloys and Compounds , Elsevier ( IF : 5.316, SNIP : 1.38, SJR : 1.112 ), page 160922, Volume 883, 2021, doi:10.1016/j.jallcom.2021.160922

[2-TMRB21] J. Tribollet , D. Muller, S. Roques, J. Bartringer, T. Fix.
Shallow implanted SiC spin qubits used for sensing an internal spin bath and external YIG spins ,
Nanoscale , Royal Society of Chemistry ( IF : 7.79, SNIP : 1.272, SJR : 2.038 ), pages 13827-13834, Volume 13, 2021, doi:10.1039/D1NR02877D

Année 2018

  • Articles dans des revues internationales avec comité de lecture répertoriées dans les bases de données internationales

[2-CBFI18] P. Chavez , I. Bulut , S. Fall, O. Ibraikulov, C. Chochos , J. Bartringer, T. Heiser, P. Lévêque, N. Leclerc.
An Electron-Transporting Thiazole-Based Polymer Synthesized Through Direct (Hetero)Arylation Polymerization ,
Molecules , MDPI ( IF : 3.098, SNIP : 1.146, SJR : 0.855 ), page 1270, Volume 23, mai 2018, doi:10.3390/molecules23061270

Année 2016

  • Brevets / Licences logicielles

[10-UB16] W. Uhring, J. Bartringer.
SPIRIT version 2016 , Dépôt de logiciel n° IDDN.FR.001.280010.000.R.P.2016.000.10000, le 1 juillet 2016.

Année 2015

  • Communications à des manifestations internationales avec actes et comité de lecture

[4-DTUM15] F. Dadouche, T. Turko, W. Uhring, I. Malass, J. Bartringer, J-P. Le Normand.
Design Methodology of TDC on Low Cost FPGA Targets, dans
SENSORCOMM 2015, ISBN: 978-1-61208-425-1, pp. 29-34, IARIA (Eds.), Venise, Italy, août 2015.

Année 2014

  • Articles dans des revues internationales avec comité de lecture répertoriées dans les bases de données internationales

[2-PBS14] P. Prathap, J. Bartringer, A. Slaoui.
Analysis of laser doping of silicon using different boron dopant sources ,
Applied Surface Science, Elsevier, Vol. 302:268-274, 2014. (  IF : 4.439, SNIP : 1.328, SJR : 1.093  )

Année 2013

  • Articles dans des revues internationales avec comité de lecture répertoriées dans les bases de données internationales

[2-LBAB13] S. Laidoudi, A. Bioud, A. Azizi, J. Bartringer, G. Schmerber, A. Dinia.
Growth and characterization of electrodeposited Cu2O thin films ,
Semiconductor Science and Technology, Institute of Physics: Hybrid Open Access, Vol. 28(11):0268-1242, octobre 2013. ( IF : 2.28, SNIP : 1.003, SJR : 0.757 )

[2-PQMB13] S. Parola, É. Quesnel, V. Muffato, J. Bartringer, A. Slaoui.
Influence of the embedding matrix on optical properties of Ge nanocrystals-based nanocomposite ,
Journal of Applied Physics, American Institute of Physics (AIP), Vol. 113:053512_1--8, 2013. (  IF : 2.176, SNIP : 0.953, SJR : 0.739 )

  • Communications à des manifestations internationales avec comité de lecture, avec résumés ou sans actes

[6-SBZM13] T. Schutz-Kuchly, J. Bartringer, J. Zelgowski, F. Mermet, A. Bahouka, M. Pawlik, J-P. Vilcot, E. Delbos, A. Slaoui.
UV and IR laser induced ablation of SIN:H, AL2O3/SIN:H, A-SI:H/SIN:H , dans
Photovoltaic technical conference - Thin film & Advanced silicon solutions 2013, Aix en Provence, France, mai 2013.

Année 2012

  • Articles dans des revues internationales avec comité de lecture répertoriées dans les bases de données internationales

[2-PQMG12] S. Parola, É. Quesnel, V. Muffato, L. Guetaz, H. Szambolics, J. Bartringer, A. Slaoui.
Structural properties of Ge nanocrystals synthesized by a PVD nanocluster source ,
Journal of Nanoparticle Research, Springer Verlag, Vol. 14:1085_1--9, 2012. (  IF : 2.127, SNIP : 0.603, SJR : 0.528 )

  • Communications à des manifestations internationales avec actes et comité de lecture

[4-SPB12] A. Slaoui, P. Prathap, J. Bartringer.
Laser doping from spin-on sources for selective emitter silicon solar cells , dans
SPIE Optics+Photonics 2012, SPIE Proceedings, ISBN 9780819491909, Vol. 8473, E.W. Reutzel (Eds.), San Diego, United States, août 2012.

  • Communications à des manifestations internationales avec comité de lecture, avec résumés ou sans actes

[6-PBS12] P. Prathap, J. Bartringer, A. Slaoui.
Selective emitter formation by laser doping of spin-on sources , dans
European Material Research Society (E-MRS) Spring Conference, Symposium on Laser Materials Processing for Micro and Nano Applications, Strasbourg, France, mai 2012.

Année 2011

  • Communications à des manifestations internationales avec actes et comité de lecture

[4-FSBB11] A. Focsa, A. Slaoui, R. Bernard, J. Bartringer, F. de Moro, C. Riune, E. Jolivet, C. Belouet, B. Bazer-Bachi, M. Lemiti.
Correlation of growth parameters of RST ribbons on the minority carrier lifetime and solar cells , dans
26th European Photovoltaic Solar Energy Conference and Exhibition (26th EU PVSEC), ISBN 3-936338-27-2, pp. 1742--1746, Hamburg, Germany, septembre 2011.

Année 2010

  • Articles dans des revues internationales avec comité de lecture répertoriées dans les bases de données internationales

[2-ARGM10] S. Al-Harthi, K. Revathy, F. Gard, A. Mesli, A. George, J. Bartringer, M. Mamor, N. Unnikrishnan.
Self-assembly of silver nanoparticles and multiwall carbon nanotubes on decomposed GaAs surfaces ,
Nanoscale Research Letters, SpringerOpen, Vol. 5:1737--1743, 2010. ( IF : 2.584, SNIP : 0.874, SJR : 0.713 )

Année 2009

  • Articles dans des revues internationales avec comité de lecture répertoriées dans les bases de données internationales

[2-MUHF09] M. Madec, W. Uhring, É. Hueber, J-B. Fasquel, J. Bartringer, Y. Hervé.
Methods for improvement of spatial light modulator image rendering ,
Optical Engineering, Society of Photo-optical Instrumentation Engineers (SPIE), Vol. 48:034002_1--13, 2009. ( IF : 0.993, SNIP : 0.746, SJR : 0.424 )

Année 2004

  • Communications à des manifestations internationales avec actes et comité de lecture

[4-UZB04] W. Uhring, V. Zint, J. Bartringer.
A low-cost high-repetition-rate picosecond laser diode pulse generator , dans
Photonics Europe 2004, Proceedings of the Society of Photo-optical Instrumentation Engineers, Vol. 5452:583--590, edited by D. Lenstra, G. Morthier, T. Erneux, M. Pessa (Eds.), Strasbourg, France, avril 2004.