logo université de Strasbourg logo CNRS logo INSA Strasbourg logo ENGEES

MATISEN team: Materials for information technology, sensing and energy conversion.

« Current and defended PhDs » : différence entre les versions

De MATISEN team: Materials for information technology, sensing and energy conversion.
Aller à la navigation Aller à la recherche
Aucun résumé des modifications
Aucun résumé des modifications
Ligne 1 : Ligne 1 :
[[fr::Thèses en cours et soutenues]]
[[fr::Thèses en cours et soutenues]]


{| {{table}}
{|
| align="center" style="background:#f0f0f0;"|'''Starting and ending year'''
| align="center" style="background:#f0f0f0;"|'''Starting and ending year'''
| align="center" style="background:#f0f0f0;"|'''PhD candidate'''
| align="center" style="background:#f0f0f0;"|'''PhD candidate'''
Ligne 8 : Ligne 8 :
| align="center" style="background:#f0f0f0;"|'''Laboratories'''
| align="center" style="background:#f0f0f0;"|'''Laboratories'''
|-
|-
| 2017- in progress||Jing Wang||Burn-in effect in fullerene-based organic solar cells||T. Heiser||ICUBE
| sept.2015-||Allessandro Quatropani||Synthèse de matéraiux à base d'oxyde pour la conversion photovoltaïque||A. Slaoui / T. Fix||ICUBE
|- style="font-style: italic; color: #4392D8;"
| 2016- in progress||François Stock|| Growth of graphene layers by laser ablation (PLD) of carbon: application to the synthesis of electrodes on transparent substrates ||F. Antoni||ICUBE
|-
|-
| 2015- in progress||Alessandro Quatropani|| Synthesis of oxide-based materials for photovoltaic conversion ||A. Slaoui / T. Fix||ICUBE
| Mai. 2015-||Yves Salinesi||Dévelopement de cellules intégrées (i-Cell) basées sur des couches minces de silicium cristallin transférées sur substrats de silicium fritté||A. Slaoui / ||S'Tile / ICUBE
|- style="font-style: italic; color: #4392D8;"
| 2015- in progress||Yves Salinesi|| Development of integrated cells (i-Cell) based on thin layers of crystalline silicon transferred on sintered silicon substrates ||A. Slaoui ||S'Tile / ICUBE
|-
|-
| 2014 – in progress||Abdellatif CHELOUCHE|| Study of the opto-electronic properties and transport of doped semiconductor nanocrystals for their integration into components of the silicon industry ||D. Mathiot, G. Ferblantier et D. Muller||ICube
| 2013-Mars 2016||Karima Bouras,|| Films d’oxyde transparents conducteurs et dopés aux terre rare pour la conversion photonique»||A. Slaoui / G. Ferblantier / T. Fix||ICUBE
|- style="font-style: italic; color: #4392D8;"
| 2013 - 2016||Karima Bouras|| Conductive and rare earth doped transparent oxide films for photon conversion ||A. Slaoui / G. Ferblantier / T. Fix||ICUBE
|-
|-
| 2013-2016||Olzhas Ibraikulov||Donor-Acceptor bulk heterojunction solar cells based on low band-gap polymers and soluble fullerene derivatives||dir: Thomas Heiser // enc: Patrick Lévêque||ICUBE
| 2013 - 2016||Olzhas Ibraikulov||Donor-Acceptor bulk heterojunction solar cells based on low band-gap polymers and soluble fullerene derivatives||T. Heiser / P. Lévêque||ICUBE
|- style="font-style: italic; color: #4392D8;"
| 2013 - 2017||Thomas Regrettier||Optically addressable organic light modulators using a donor/acceptor bulk heterojunction as photosensitive layer||T. Heiser||ICUBE
|-
|-
| 2014 - 2017||Tianyan Han||Solution-processed bulk heterojunction devices based on bodipy and triazatruxene derivatives||T. Heiser / P. Lévêque||ICUBE
| 2013…||Thomas Regrettier||Optically addressable organic light modulators using a donor/acceptor bulk heterojunction as photosensitive layer||dir. Thomas Heiser||ICUBE
|- style="font-style: italic; color: #4392D8;"
| 2012 - 2016||Marie DEVITA|| Measurement and management of noble metal contaminants in the advanced microelectronics industry ||D. Mathiot, N. Drogue et H. Fontaine||ICube CIFRE STMicroelectronics, collaboration CEA-LETI
|-
|-
| 2014 - 2017||Thomas GRENOUILLOUX|| Study of physicochemical behavior of dopants in II-VI semiconductors for infrared detection ||D. Mathiot, N. Péré-Laperne et A. Ferron||ICube CIFRE Sofradir, collaboration CEA-LETI
| 2014…||Tianyan Han||Solution-processed bulk heterojunction devices based on bodipy and triazatruxene derivatives.||dir: Thomas Heiser // enc: Patrick Lévêque||ICUBE
|- style="font-style: italic; color: #4392D8;"
| 2014 - 2017||Florian LE GOFF|| Realization of SWIR photodiodes in InGaAs and InP of "loophole" technology by MOVPD diffusion ||D. Mathiot et J.L. Reverchon||ICube CIFRE Thales 3-5 Lab.
|-
|-
| 2011 - 2015||Rim KHELIFI|| Ion beam synthesis of functional semiconductor nanocrystals in silicon technology ||D. Mathiot et D. Muller||InESS (ICube)
| Nov. 2012 - En cours||Marie DEVITA||Mesure et gestion des contaminants métalliques nobles dans l'industrie microélectronique avancée||D. Mathiot, N. Drogue et H. Fontaine||ICube CIFRE STMicroelectronics, collaboration CEA-LETI
|- style="font-style: italic; color: #4392D8;"
| 2011 - 2014||Julien LAURENT|| Improvement of material yield during the crystallization of multi-crystalline photovoltaic silicon ingots ||D. Mathiot et A. Jouini||InESS (ICube) CEA-LITEN
|-
|-
| 2011 - 2014||Larissa DJOMENI|| Study of the integration of through vias realized by MOCVD for the 3D stacking of microelectronic components ||D.Mathiot, T. Mourier et S. Minoret||InESS (ICube) CEA-LETI
| Oct. 2014 - En cours||Abdellatif CHELOUCHE||Étude des propriétés opto-électroniques et de transport de nanocristaux semi-conducteurs dopés en vue de leur intégration dans des composants de la filière silicium||D. Mathiot, G. Ferblantier et D. Muller||ICube
|- style="font-style: italic; color: #4392D8;"
| 2010 - 2014||Peter Lienerth ||Elaboration and characterization of field-effect transistors based on organic molecular wires for chemical sensing applications ||T. Heiser / P. Lévêque||ICUBE
|-
|-
| 2009 - 2013||Sadiara Fall|| Study of charge transport in semiconductor polymers for photovoltaic applications ||T. Heiser / P. Lévêque||InESS
| Oct. 2014 - En cours||Thomas GRENOUILLOUX||Etude du comportement physico-chimique des dopants dans les semiconducteurs II-VI pour la détection infrarouge||D. Mathiot, N. Péré-Laperne et A. Ferron||ICube CIFRE Sofradir, collaboration CEA-LETI
|- style="font-style: italic; color: #4392D8;"
| 2010 - 2013|| Fabien Erhardt|| Synthesis of silicon nanocrystals in oxynitride matrices and application to photovoltaics ||A. Slaoui / G. Ferblantier||ICUBE
|-
|-
| 2009 - 2012|| B. Paviet-Salomon|| Laser Assisted Selective Emitters, Application to Silicon Photovoltaic ||A. Slaoui||CEA/InESS
| Nov. 2014 - En cours||Florian LE GOFF||Réalisation de photodiodes SWIR en InGaAs et InP de technologie « loophole » par diffusion MOVPD||D. Mathiot et J.L. Reverchon||ICube CIFRE Thales 3-5 Lab.
|- style="font-style: italic; color: #4392D8;"
| 2009 - 2012|| S. Parola|| Development and characterization of silicon and germanium naoncrystals physico-chemically for photovoltaic ||A. Slaoui ||CEA/InESS
|-
|-
| 2007 - 2010|| Djamel Madi|| Passivation of crystalline silicon in a thin layer by hydrogenation and oxidation ||||Université de Tlemcen/InESS
| Oct. 2011 - Févr. 2015||Rim KHELIFI||Synthèse par faisceaux d'ions de nanocristaux semi-conducteurs fonctionnels en technologie silicium||D. Mathiot et D. Muller||InESS (ICube)
|- style="font-style: italic; color: #4392D8;"
| 2008 - 2012||Yana GURIMSKAYA|| Behavior of some metallic impurities in germanium: A study by DLTS-MCTS-Laplace DLTS capacitive techniques ||A. Mesli et D. Mathiot||InESS
|-
|-
| 2007 - 2012||Zabardjad Said,|| Elaboration and characterization of crystalline silicon in thin layer by laser irradiation and halogen lamps ||A. Slaoui / E. Fogarassy||InESS
| Juin 2011 - Déc. 2014||Julien LAURENT||Amélioration du rendement matière lors de la cristallisation de lingots de silicium photovoltaïque multi-cristallin||D. Mathiot et A. Jouini||InESS (ICube) CEA-LITEN
|- style="font-style: italic; color: #4392D8;"
| 2008 - 2011||Véronique Gernigon || Use of block copolymers in organic solar cells: morphology, charge transport and photovoltaic conversion ||T. Heiser /G. Hadziioannou / N. Leclerc / P. Lévêque||InESS/LIPHT
|-
|-
| 2007 - 2011||Martin ZLATANSKI|| Design of an ultra-fast multi-line CMOS opto-sampler integrating a high-resolution delay generator (DLL)||D. Mathiot et W. Uhring||InESS
| Oct. 2011 - Déc. 2014||Larissa DJOMENI||Etude de l’intégration de vias traversants réalisés par MOCVD en vue de l’empilement en 3D de composants microélectroniques||D.Mathiot, T. Mourier et S. Minoret||InESS (ICube) CEA-LETI
|- style="font-style: italic; color: #4392D8;"
| 2007 - 2010||F. Delachat|| Silicon nanoparticles for the 3rd generation of solar cells ||A. Slaoui / G. Ferblantier||InESS
|-
|-
| 2007 - 2010||Laure Biniek|| Semiconductor polymers with low bandgap: from synthesis to organic photovoltaic device||T. Heiser / G. Hadziioannou / N. Leclerc / P. Lévêque||InESS/LIPHT
| 2010-2014||Peter Lienerth ||Elaboration and characterization of field-effect transistors based on organic molecular wires for chemical sensing applications ||dir: Thomas Heiser // enc: Patrick Lévêque||ICUBE
|- style="font-style: italic; color: #4392D8;"
| 2006 - 2010||Alexis COLIN|| Study of radiative and thermal couplings and physicochemical modifications generated by millisecond laser annealing on the polysilicon grid of 45 nm CMOS technology ||D. Mathiot et E. Fogarassy||"InESS CIFRE STMicroelectronics"
|-
| 2006 - 2009||O. Tuzun|| N-type polycrystalline silicon by metal-induced crystallization and electric field ||A. Slaoui||InESS
|- style="font-style: italic; color: #4392D8;"
| 2005 - 2009||Rony Bechara|| Elaboration and characterization of photovoltaic cells based on semiconducting polymers ||T. Heiser / G. Hadziioannou||InESS/LIPHT
|-
|-
| 2006 - 2009||Thomas CANNEAUX|| Study of the diffusion of the usual dopants in germanium ||JP. Ponpon et D. Mathiot||InESS
| 2009-2013||Sadiara Fall||Etude du transport de charges dans les polymères semi-conducteurs pour des applications photovoltaïques||dir: Thomas Heiser // enc: Patrick Lévêque||InESS
|- style="font-style: italic; color: #4392D8;"
| 2007 - 2008 || H. Charifi|| Structural, electrical, and passivation properties of silicon nitride: Application to silicon photovltaic cells ||A. Slaoui / J.C. Muller||InESS
|-
|-
| 2005 - 2008||Fanny Richard|| esign, synthesis and characterization of "stick-pelota" block copolymers for photovoltaic applications: From macromolecule to device ||G. Hadziioannou / T. Heiser||InESS/LIPHT
| 2010-. Octo. 2013|| Fabien Erhardt|| « synthèse de nanocristaux de silicium dans des matrices d’oxynitrure et application au photovoltaïque »||A. Slaoui / G. Ferblantier||ICUBE
|- style="font-style: italic; color: #4392D8;"
| 2004 - 2008||Nathalie CAGNAT|| Ion implantation and ultra-thin junctions: Characterization, fault engineering and application to 65 and 45 nm technologies ||D. Mathiot||"InESS CIFRE STMicroelectronics"
|-
|-
| 2002 - 2007||Frédéric MOREL|| Design, realization and characterization of an imager in standard CMOS technology for the repetitive observation of brief light phenomena of low power ||D. Mathiot et W. Uhring||PHASE (InESS)
| 2009-sept.2012|| B. Paviet-Salomon||« Emetteurs Selectifs assistés par laser, Application au photovoltaïque silicium »||A. Slaoui||CEA/InESS
|- style="font-style: italic; color: #4392D8;"
| 2003 - 2006 || S. Duguay|| Storage of charges in nano-crystals of silicon or germanium in silica matrices ||A. Slaoui / JJ/ Grob||InESS
|-
|-
| 2002 - 2005 ||E. Pihan|| Study of aluminum-induced crystallization mechanisms of amorphous silicon: thin film solar cells ||A. Slaoui||PHASE
| 2009-. Sept.2012|| S. Parola,||Elaboration et caractérisations de naoncristaux de silicium et germanium par voie physico-chimique pour le photovoltaïque »||A. Slaoui / ||CEA/InESS
|- style="font-style: italic; color: #4392D8;"
| 2002 - 2005 || A. Zerga,|| Characterization, Modeling and Simulation of Polycrystalline Silicon Based Photovoltaic Cells in Thin Film Deposited by RT-CVD Process ||A. Slaoui / A. mahfoud|| Thèse Université de Tlemcen/PHASE
|-
|-
| 2000 - 2003||Assia Belayachi|| Contribution to the study of copper in silicon and an associated characterization technique ||T. HEISER||PHASE
| 2007- 2010|| Djamel Madi|| « Passivation du silicium cristallin en couche mince par hydrogénation et oxidation »||||Université de Tlemcen/InESS
|- style="font-style: italic; color: #4392D8;"
| 1999 - 2003||Christian DUTTO|| Formation and characterization of P / N junctions in SiC by ion implantation and laser annealing ||D. Mathiot et E. Fogarassy||"PHASE CIFRE STMicroelectronics"
|-
|-
| 1999 - 2003||Frédéric BOUCARD|| Modeling dopant diffusion in silicon for the realization of thin junctions ||D. Mathiot et P. Rivallain||"PHASE CIFRE Silvaco, collaboration CEA-LETI"
| Nov. 2008 - Mai 2012||Yana GURIMSKAYA||Comportement de quelques impuretés métalliques dans le germanium : Une étude par les techniques capacitives DLTS-MCTS-Laplace DLTS||A. Mesli et D. Mathiot||InESS
|- style="font-style: italic; color: #4392D8;"
| 2000 - 2003||Frédéric CAYREL|| Cavity formation mechanism by helium implantation. Roles of dopants and residual impurities ||D. Mathiot et R. Jérisian||"PHASE LMP Tours"
|-
|-
| 2001 - 2003||Fabien PREGALDINY|| Study and modeling of the dynamic behavior of highly sub-micron MOS transistors ||D. Mathiot et C. Lallement||PHASE
| 2007- janv.2012||Zabardjad Said,|| « Elaboration et caractérisation de silicium cristallin en couche mince par irradiation laser et lampes halogènes »||A. Slaoui / E. Fogarassy||InESS
|- style="font-style: italic; color: #4392D8;"
| 1997 - 2000||S. Bourdais|| Study of the deposition and physical properties of polycrystalline silicon obtained by the RTCVD process on mullite substrates: Application to photovoltaic cells in thin layers ||A. Slaoui||PHASE
|-
|-
| 1997 - 2000||Christophe ORTIZ|| Contribution to the study of diffusion phenomena of aluminum in silicon. Application to the realization of deep junctions ||D. Mathiot et R. Jérisian||"PHASE LMP Tours"
| 2008-2011||Véronique Gernigon ||Utilisation de copolymères à blocs dans les cellules solaires organiques : morphologie, transport de charge et conversion photovoltaïque ||dir: Thomas Heiser/Georges Hadziioannou// enc: Nicolas Leclerc/ Patrick Lévêque||InESS/LIPHT
|-
| Oct. 2007 - Juin 2011||Martin ZLATANSKI||Conception d'un opto-échantillonneur CMOS multilignes ultra-rapide intégrant un générateur de retard haute résolution (DLL)||D. Mathiot et W. Uhring||InESS
|-
| 2007- Oct. 2010||F. Delachat||« Nanoparticules de silicium pour la 3ème génération de cellules solaires »||A. Slaoui / G. Ferblantier||InESS
|-
| 2007-2010||Laure Biniek||Polymères semi-conducteurs à faible largeur de bande interdite : de la synthèse au dispositif photovoltaïque organique. ||dir: Thomas Heiser/Georges Hadziioannou// enc: Nicolas Leclerc/ Patrick Lévêque||InESS/LIPHT
|-
| Déc. 2006 - Avril 2010||Alexis COLIN||Étude des couplages radiatifs et thermiques et des modifications physico-chimiques engendrés par un recuit laser milliseconde sur la grille polysilicium de la technologie CMOS 45 nm||D. Mathiot et E. Fogarassy||"InESS CIFRE STMicroelectronics"
|-
| 2006-Decembre. 2009||O. Tuzun|| « Silicium polycristallin de type N par cristallisation induite par métaux et champ électrique »||A. Slaoui||InESS
|-
| 2005-2009||Rony Bechara||Elaboration et caractérisation de cellules photovoltaïques à base de polymères semi-conducteurs||Thomas Heiser/Georges Hadziioannou||InESS/LIPHT
|-
| Oct. 2006 - Nov. 2009||Thomas CANNEAUX||Étude de la diffusion des dopants usuels dans le germanium||JP. Ponpon et D. Mathiot||InESS
|-
| 2007- Decembre 2008 || H. Charifi,||« Propriétés sustructurales , électriques, et de passivation du nitrure de silicium : Application aux cellules photovltaïques au silicium »||A. Slaoui / J.C. Muller||InESS
|-
| 2005-2008||Fanny Richard|| Conception, synthèse et caractérisation de copolymères à blocs « bâtonnet-pelote » en vue d’applications photovoltaïques : De la macromolécule au dispositif ||Georges Hadziioannou/ Thomas Heiser||InESS/LIPHT
|-
| Déc. 2004 - Avril 2008||Nathalie CAGNAT||Implantation ionique et jonctions ultra-fines : Caractérisation, ingénierie des défauts et application aux technologies 65 et 45 nm||D. Mathiot||"InESS CIFRE STMicroelectronics"
|-
| Oct. 2002 - Juil. 2007||Frédéric MOREL||Conception, réalisation et caractérisation d'un imageur en technologie CMOS standard pour l'observation en mode répétitif de phénomènes lumineux brefs de faible puissance||D. Mathiot et W. Uhring||PHASE (InESS)
|-
| 2003- Novembre 2006 || S. Duguay||« Stockage de charges dans les nano-cristaux de silicium ou de germanium dans des matrices de silice »||A. Slaoui / JJ/ Grob||InESS
|-
| 2002- Décembre 2005 ||E. Pihan||« Etude des mécanismes de cristallisation induites par aluminium du silicium amorphe : photopiles en couches minces »||A. Slaoui||PHASE
|-
| 2002- Novembre 2005; || A. Zerga,||« Caractérisation, Modélisation et Simulation des Cellules Photovoltaïques à base de Silicium Polycristallin en Couche Mince Déposé par Procédé RT-CVD» ; ||A. Slaoui / A. mahfoud|| Thèse Université de Tlemcen/PHASE
|-
| 2000-2003||Assia Belayachi||Contribution à l’étude du cuivre dans le silicium et d’une technique de caractérisation associée ||Thomas HEISER||PHASE
|-
| Oct. 1999 - Mars 2003||Christian DUTTO||Formation et caractérisation de jonctions P/N dans SiC par implantation ionique et recuit laser||D. Mathiot et E. Fogarassy||"PHASE CIFRE STMicroelectronics"
|-
| Oct. 1999 - Avril 2003||Frédéric BOUCARD||Modélisation de la diffusion des dopants dans le silicium pour la réalisation de jonctions fines||D. Mathiot et P. Rivallain||"PHASE CIFRE Silvaco, collaboration CEA-LETI"
|-
| Oct. 2000 - Déc. 2003||Frédéric CAYREL||Mécanisme de formation des cavités par implantation d'hélium. Rôles des dopants et des impuretés résiduelles||D. Mathiot et R. Jérisian||"PHASE LMP Tours"
|-
| Octt. 2001 - Déc. 2003||Fabien PREGALDINY||Étude et modélisation du comportement dynamique des transistors MOS fortement sub-microniques||D. Mathiot et C. Lallement||PHASE
|-
| 1997-Janvier 2000||S. Bourdais, ||Etude du dépôt et des propriétés physiques du silicium polycristallin obtenu par le procédé RTCVD sur substrats de mullites : Application aux cellules photovoltaïques en couches minces||A. Slaoui||PHASE
|-
| Oct.1997 - Sept.2000||Christophe ORTIZ||Contribution à l'étude des phénomènes de diffusion de l'aluminium dans le silicium. Application à la réalisation de jonctions profondes||D. Mathiot et R. Jérisian||"PHASE LMP Tours"
|-
|-
|
|

Version du 13 mars 2018 à 16:38


Starting and ending year PhD candidate Title of the thesis Director/supervisor Laboratories
2017- in progress Jing Wang Burn-in effect in fullerene-based organic solar cells T. Heiser ICUBE
2016- in progress François Stock Growth of graphene layers by laser ablation (PLD) of carbon: application to the synthesis of electrodes on transparent substrates F. Antoni ICUBE
2015- in progress Alessandro Quatropani Synthesis of oxide-based materials for photovoltaic conversion A. Slaoui / T. Fix ICUBE
2015- in progress Yves Salinesi Development of integrated cells (i-Cell) based on thin layers of crystalline silicon transferred on sintered silicon substrates A. Slaoui S'Tile / ICUBE
2014 – in progress Abdellatif CHELOUCHE Study of the opto-electronic properties and transport of doped semiconductor nanocrystals for their integration into components of the silicon industry D. Mathiot, G. Ferblantier et D. Muller ICube
2013 - 2016 Karima Bouras Conductive and rare earth doped transparent oxide films for photon conversion A. Slaoui / G. Ferblantier / T. Fix ICUBE
2013 - 2016 Olzhas Ibraikulov Donor-Acceptor bulk heterojunction solar cells based on low band-gap polymers and soluble fullerene derivatives T. Heiser / P. Lévêque ICUBE
2013 - 2017 Thomas Regrettier Optically addressable organic light modulators using a donor/acceptor bulk heterojunction as photosensitive layer T. Heiser ICUBE
2014 - 2017 Tianyan Han Solution-processed bulk heterojunction devices based on bodipy and triazatruxene derivatives T. Heiser / P. Lévêque ICUBE
2012 - 2016 Marie DEVITA Measurement and management of noble metal contaminants in the advanced microelectronics industry D. Mathiot, N. Drogue et H. Fontaine ICube CIFRE STMicroelectronics, collaboration CEA-LETI
2014 - 2017 Thomas GRENOUILLOUX Study of physicochemical behavior of dopants in II-VI semiconductors for infrared detection D. Mathiot, N. Péré-Laperne et A. Ferron ICube CIFRE Sofradir, collaboration CEA-LETI
2014 - 2017 Florian LE GOFF Realization of SWIR photodiodes in InGaAs and InP of "loophole" technology by MOVPD diffusion D. Mathiot et J.L. Reverchon ICube CIFRE Thales 3-5 Lab.
2011 - 2015 Rim KHELIFI Ion beam synthesis of functional semiconductor nanocrystals in silicon technology D. Mathiot et D. Muller InESS (ICube)
2011 - 2014 Julien LAURENT Improvement of material yield during the crystallization of multi-crystalline photovoltaic silicon ingots D. Mathiot et A. Jouini InESS (ICube) CEA-LITEN
2011 - 2014 Larissa DJOMENI Study of the integration of through vias realized by MOCVD for the 3D stacking of microelectronic components D.Mathiot, T. Mourier et S. Minoret InESS (ICube) CEA-LETI
2010 - 2014 Peter Lienerth Elaboration and characterization of field-effect transistors based on organic molecular wires for chemical sensing applications T. Heiser / P. Lévêque ICUBE
2009 - 2013 Sadiara Fall Study of charge transport in semiconductor polymers for photovoltaic applications T. Heiser / P. Lévêque InESS
2010 - 2013 Fabien Erhardt Synthesis of silicon nanocrystals in oxynitride matrices and application to photovoltaics A. Slaoui / G. Ferblantier ICUBE
2009 - 2012 B. Paviet-Salomon Laser Assisted Selective Emitters, Application to Silicon Photovoltaic A. Slaoui CEA/InESS
2009 - 2012 S. Parola Development and characterization of silicon and germanium naoncrystals physico-chemically for photovoltaic A. Slaoui CEA/InESS
2007 - 2010 Djamel Madi Passivation of crystalline silicon in a thin layer by hydrogenation and oxidation Université de Tlemcen/InESS
2008 - 2012 Yana GURIMSKAYA Behavior of some metallic impurities in germanium: A study by DLTS-MCTS-Laplace DLTS capacitive techniques A. Mesli et D. Mathiot InESS
2007 - 2012 Zabardjad Said, Elaboration and characterization of crystalline silicon in thin layer by laser irradiation and halogen lamps A. Slaoui / E. Fogarassy InESS
2008 - 2011 Véronique Gernigon Use of block copolymers in organic solar cells: morphology, charge transport and photovoltaic conversion T. Heiser /G. Hadziioannou / N. Leclerc / P. Lévêque InESS/LIPHT
2007 - 2011 Martin ZLATANSKI Design of an ultra-fast multi-line CMOS opto-sampler integrating a high-resolution delay generator (DLL) D. Mathiot et W. Uhring InESS
2007 - 2010 F. Delachat Silicon nanoparticles for the 3rd generation of solar cells A. Slaoui / G. Ferblantier InESS
2007 - 2010 Laure Biniek Semiconductor polymers with low bandgap: from synthesis to organic photovoltaic device T. Heiser / G. Hadziioannou / N. Leclerc / P. Lévêque InESS/LIPHT
2006 - 2010 Alexis COLIN Study of radiative and thermal couplings and physicochemical modifications generated by millisecond laser annealing on the polysilicon grid of 45 nm CMOS technology D. Mathiot et E. Fogarassy "InESS CIFRE STMicroelectronics"
2006 - 2009 O. Tuzun N-type polycrystalline silicon by metal-induced crystallization and electric field A. Slaoui InESS
2005 - 2009 Rony Bechara Elaboration and characterization of photovoltaic cells based on semiconducting polymers T. Heiser / G. Hadziioannou InESS/LIPHT
2006 - 2009 Thomas CANNEAUX Study of the diffusion of the usual dopants in germanium JP. Ponpon et D. Mathiot InESS
2007 - 2008 H. Charifi Structural, electrical, and passivation properties of silicon nitride: Application to silicon photovltaic cells A. Slaoui / J.C. Muller InESS
2005 - 2008 Fanny Richard esign, synthesis and characterization of "stick-pelota" block copolymers for photovoltaic applications: From macromolecule to device G. Hadziioannou / T. Heiser InESS/LIPHT
2004 - 2008 Nathalie CAGNAT Ion implantation and ultra-thin junctions: Characterization, fault engineering and application to 65 and 45 nm technologies D. Mathiot "InESS CIFRE STMicroelectronics"
2002 - 2007 Frédéric MOREL Design, realization and characterization of an imager in standard CMOS technology for the repetitive observation of brief light phenomena of low power D. Mathiot et W. Uhring PHASE (InESS)
2003 - 2006 S. Duguay Storage of charges in nano-crystals of silicon or germanium in silica matrices A. Slaoui / JJ/ Grob InESS
2002 - 2005 E. Pihan Study of aluminum-induced crystallization mechanisms of amorphous silicon: thin film solar cells A. Slaoui PHASE
2002 - 2005 A. Zerga, Characterization, Modeling and Simulation of Polycrystalline Silicon Based Photovoltaic Cells in Thin Film Deposited by RT-CVD Process A. Slaoui / A. mahfoud Thèse Université de Tlemcen/PHASE
2000 - 2003 Assia Belayachi Contribution to the study of copper in silicon and an associated characterization technique T. HEISER PHASE
1999 - 2003 Christian DUTTO Formation and characterization of P / N junctions in SiC by ion implantation and laser annealing D. Mathiot et E. Fogarassy "PHASE CIFRE STMicroelectronics"
1999 - 2003 Frédéric BOUCARD Modeling dopant diffusion in silicon for the realization of thin junctions D. Mathiot et P. Rivallain "PHASE CIFRE Silvaco, collaboration CEA-LETI"
2000 - 2003 Frédéric CAYREL Cavity formation mechanism by helium implantation. Roles of dopants and residual impurities D. Mathiot et R. Jérisian "PHASE LMP Tours"
2001 - 2003 Fabien PREGALDINY Study and modeling of the dynamic behavior of highly sub-micron MOS transistors D. Mathiot et C. Lallement PHASE
1997 - 2000 S. Bourdais Study of the deposition and physical properties of polycrystalline silicon obtained by the RTCVD process on mullite substrates: Application to photovoltaic cells in thin layers A. Slaoui PHASE
1997 - 2000 Christophe ORTIZ Contribution to the study of diffusion phenomena of aluminum in silicon. Application to the realization of deep junctions D. Mathiot et R. Jérisian "PHASE LMP Tours"
Récupérée de « https://matisen.icube.unistra.fr/en/index.php?title=Current_and_defended_PhDs&oldid=541 »